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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 59A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 400 N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V 160W (Tc)
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Infineon Technologies MOSFET N-CH 30V 59A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 900 N-Channel - 30V 59A (Tc) 9.5 mOhm @ 21A, 10V 2.25V @ 25µA 15nC @ 4.5V 1210pF @ 15V 4.5V, 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET N-CH 30V 59A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 30V 59A (Tc) 9.5 mOhm @ 21A, 10V 2.25V @ 250µA 15nC @ 4.5V 1210pF @ 15V 4.5V, 10V ±20V 57W (Tc)
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Per Unit
$0.720
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Infineon Technologies MOSFET N-CH 75V 59A TO220 TO-220-3 StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1000 N-Channel - 75V 59A (Tc) 10.6 mOhm @ 35A, 10V 3.7V @ 100µA 83nC @ 10V 3049pF @ 25V 6V, 10V ±20V 99W (Tc)
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Per Unit
$2.490
RFQ
732
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 59A (Tc) 25 mOhm @ 35.4A, 10V 5.5V @ 250µA 114nC @ 10V 2450pF @ 25V 10V ±30V 3.8W (Ta), 200W (Tc)
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