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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 100V 62A TO-220AB HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 550 N-Channel - 100V 62A (Tc) 13.5 mOhm @ 37A, 10V 4V @ 100µA 87nC @ 10V 3180pF @ 50V 10V ±20V 140W (Tc)
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Infineon Technologies MOSFET N-CH 30V 38A TO-220AB HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 550 N-Channel - 30V 38A (Tc) 26 mOhm @ 20A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 68W (Tc)
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$1.030
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Texas instruments NEW LF VERSION OF CSD18502KCS NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 550 N-Channel - 40V 194A (Ta) 2.6 mOhm @ 100A, 10V 2.4V @ 250µA 64nC @ 10V 5940pF @ 20V 4.5V, 10V ±20V 188W (Ta)
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