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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
2N6766
5+
$10.000
RFQ
862
In-stock
IR / Infineon MOSFET N-CH 200V TO-204AE TO-3 TO-204AE - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 0 455 N-Channel - 200V 30A (Tc) 90 mOhm @ 30A, 10V 4V @ 250µA 115nC @ 10V - 10V ±20V 4W (Ta), 150W (Tc)
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Infineon Technologies MOSFET N CH 200V 3.7A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 2000 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 7A TO220-3 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN 8-VQFN Exposed Pad HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 1 N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.8A PQFN 8-VQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 4000 N-Channel - 200V 3.8A (Ta), 20A (Tc) 99.9 mOhm @ 5.8A, 10V 5V @ 100µA 30nC @ 10V 1380pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V 3.6W (Ta), 8.3W (Tc)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 665 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO-220 TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) PG-TO-220-3 0 500 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 5.5A TO-220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 2000 N-Channel - 200V 5.5A (Tc) 600 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 7A TO-220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 9.5A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SIPMOS® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TO263-3 0 1000 N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 200V 9.5A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 200V 9.5A TO220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 200V 14.5A TO263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 10V ±20V 95W (Tc)
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Infineon Technologies MOSFET N-CH 200V 21A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V 125W (Tc)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4085 N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 190 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 7A TO-220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 200V 21A TO-220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V 125W (Tc)
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Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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