- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Power Dissipation (Max) :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 29A 8VQFN | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) Single Die | 0 | 4000 | N-Channel | - | 30V | 29A (Ta), 100A (Tc) | 2.5 mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | 3635pF @ 25V | 4.5V, 10V | ±20V | 3.6W (Ta), 104W (Tc) | ||||
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VIEW | Texas instruments | MOSFET N-CH 30V 100A 8SON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSONP (5x6) | 0 | 2500 | N-Channel | - | 30V | 29A (Ta), 100A (Tc) | 3.4 mOhm @ 30A, 8V | 1.6V @ 250µA | 18.3nC @ 4.5V | 2600pF @ 15V | 3V, 8V | +10V, -8V | 3.1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 29A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | Schottky Diode (Body) | 30V | 29A (Ta), 100A (Tc) | 1.9 mOhm @ 30A, 10V | 2V @ 250µA | 33nC @ 10V | 2200pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta), 50W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | 2.5W (Ta), 69W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 36nC @ 10V | 2500pF @ 12V | 4.5V, 10V | ±20V | 2.5W (Ta), 69W (Tc) | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | 0 | 4000 | N-Channel | - | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 156W (Tc) |