- Manufacture :
- Series :
- Supplier Device Package :
- Factory Stock :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 100 mOhm @ 2.2A, 4.5V (1)
- 120 mOhm @ 4A, 4.5V (1)
- 135 mOhm @ 1.7A, 4.5V (1)
- 140 mOhm @ 1.7A, 4.5V (1)
- 180 mOhm @ 930mA, 4.5V (1)
- 200 mOhm @ 1.6A, 4.5V (1)
- 25 mOhm @ 7.2A, 4.5V (1)
- 270 mOhm @ 1.2A, 4.5V (1)
- 29 mOhm @ 6A, 4.5V (2)
- 35 mOhm @ 3.8A, 4.5V (1)
- 42 mOhm @ 1A, 4.5V (1)
- 495 mOhm @ 400mA, 4.5V (2)
- 50 mOhm @ 2.6A, 4.5V (1)
- 60 mOhm @ 3.4A, 4.5V (1)
- 90 mOhm @ 2.2A, 4.5V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 5.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | N-Channel | - | 20V | 5.7A (Ta) | 35 mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 650pF @ 15V | 2.7V, 4.5V | ±12V | 1.8W (Ta) | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 15000 | 500 | N-Channel | - | 30V | 7.2A (Ta) | 25 mOhm @ 7.2A, 4.5V | 700mV @ 250µA | 23.1nC @ 4.5V | 2480pF @ 15V | 2.5V, 4.5V | ±12V | 2W (Ta) | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-CH 8V 2.7A X1-WLB0808-4 | 4-XFBGA, WLBGA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-WLB0808-4 | 0 | 3000 | N-Channel | - | 8V | 2.7A (Ta) | 42 mOhm @ 1A, 4.5V | 700mV @ 250µA | 15nC @ 4.5V | 908pF @ 6V | 1.2V, 4.5V | ±5V | 740mW (Ta) | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | N-Channel | - | 20V | 3.4A (Ta) | 60 mOhm @ 3.4A, 4.5V | 700mV @ 250µA | 6.6nC @ 4.5V | 544pF @ 10V | 2.5V, 4.5V | ±12V | 1W (Ta) | ||||
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9,000
In-stock
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Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | SOT-23-6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro6™(TSOP-6) | 0 | 3000 | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | 1.7W (Ta) | ||||
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36,000
In-stock
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Infineon Technologies | MOSFET N-CH 20V 3.2A 6-TSOP | SOT-23-6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro6™(TSOP-6) | 0 | 3000 | N-Channel | - | 20V | 3.2A (Ta) | 100 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 7nC @ 4.5V | 300pF @ 15V | 2.7V, 4.5V | ±12V | 1.7W (Ta) | ||||
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48,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.9A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | N-Channel | - | 20V | 1.9A (Ta) | 120 mOhm @ 4A, 4.5V | 700mV @ 250µA | 3nC @ 4.5V | 303pF @ 15V | 2.5V, 4.5V | ±12V | 625mW (Ta) | ||||
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33,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 0.59A SOT523 | SOT-523 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-523 | 75000 | 3000 | P-Channel | - | 20V | 590mA (Ta) | 495 mOhm @ 400mA, 4.5V | 700mV @ 250µA | 1.54nC @ 8V | 80pF @ 10V | 1.8V, 4.5V | ±8V | 240mW (Ta) | ||||
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207,000
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.7A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 831000 | 3000 | N-Channel | - | 20V | 1.7A (Ta) | 180 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.4nC @ 4.5V | 160pF @ 15V | 2.7V, 4.5V | ±12V | 625mW (Ta) | ||||
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110,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 770MA 3DFN | 3-XFDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X2-DFN1006-3 | 2280000 | 10000 | P-Channel | - | 20V | 770mA (Ta) | 495 mOhm @ 400mA, 4.5V | 700mV @ 250µA | 1.54nC @ 8V | 80pF @ 10V | 1.8V, 4.5V | ±8V | 430mW (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 1.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | 2 P-Channel (Dual) | 1.25W | Logic Level Gate | 20V | 1.7A | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | |||||||
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4,000
In-stock
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Infineon Technologies | MOSFET 2P-CH 20V 4.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | |||||||
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4,000
In-stock
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Infineon Technologies | MOSFET N/P-CH 20V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2W | Logic Level Gate | 20V | 6.6A, 5.3A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | |||||||
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4,000
In-stock
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Infineon Technologies | MOSFET 2N-CH 20V 2.4A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | 2 N-Channel (Dual) | 1.25W | Logic Level Gate | 20V | 2.4A | 135 mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | |||||||
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12,000
In-stock
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Infineon Technologies | MOSFET N/P-CH 20V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2W | Logic Level Gate | 20V | 5.2A, 4.3A | 50 mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | |||||||
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28,000
In-stock
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Infineon Technologies | MOSFET N/P-CH 20V 1.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | N and P-Channel | 1.25W | Logic Level Gate | 20V | 2.4A, 1.7A | 140 mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V |
