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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.855
VIEW
RFQ
STMicroelectronics MOSFET P-CH 30V 7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active 8-SO 0 2500 P-Channel - 30V 7A (Tc) 21 mOhm @ 3.5A, 10V 2.5V @ 250µA 38nC @ 4.5V 2600pF @ 25V 4.5V, 10V ±20V 2.5W (Tc)
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Per Unit
$0.470
RFQ
8,000
In-stock
Infineon Technologies MOSFET P-CH 12V 11.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 12V 11.5A (Tc) 14 mOhm @ 11.5A, 4.5V 900mV @ 250µA 38nC @ 4.5V 3529pF @ 10V 1.8V, 4.5V ±8V 2.5W (Ta)
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