- Manufacture :
- Series :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | 330W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 80A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 4.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) |