- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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86,500
In-stock
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STMicroelectronics | MOSFET N-CH 600V 20A TO-247 | TO-247-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 54nC @ 10V | 1500pF @ 25V | 10V | ±30V | 192W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 600V 20A TO-220 | TO-220-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 54nC @ 10V | 1500pF @ 25V | 10V | ±30V | 192W (Tc) | |||
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2,503
In-stock
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Infineon Technologies | MOSFET N-CH 250V 17A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 250V | 17A (Tc) | 100 mOhm @ 17A, 10V | 4V @ 54µA | 19nC @ 10V | 1500pF @ 25V | 10V | ±20V | 107W (Tc) | |||
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2,912
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 55V | 53A (Tc) | 20 mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | 1500pF @ 25V | 10V | ±20V | 120W (Tc) |
