- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
8,000
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
20,000
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | |||||||
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A/12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 9.3 mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | |||||||
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 30V 8.1A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V |