- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 11.5A, 10V (1)
- 105 mOhm @ 3.4A, 10V (1)
- 11 mOhm @ 12A, 20V (1)
- 110 mOhm @ 9.6A, 10V (1)
- 160 mOhm @ 5A, 10V (1)
- 17 mOhm @ 10A, 10V (1)
- 175 mOhm @ 6.6A, 10V (1)
- 180 mOhm @ 1.5A, 10V (1)
- 295 mOhm @ 6.6A, 10V (1)
- 480 mOhm @ 3.9A, 10V (1)
- 50 mOhm @ 7A, 10V (1)
- 6.7 mOhm @ 15A, 4.5V (1)
- 65 mOhm @ 16A, 10V (1)
- 90 mOhm @ 2.5A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET P-CH 60V 10A TO-220FP | TO-220-3 Full Pack | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220FP | 0 | 2000 | P-Channel | - | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | 20W (Tc) | |||
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56,000
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | |||
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VIEW | Texas instruments | MOSFET P-CH 15V 2.18A 16-TSSOP | 16-TSSOP (0.173", 4.40mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 16-TSSOP | 0 | 2000 | P-Channel | - | 15V | 2.18A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 2.7V, 10V | +2V, -15V | 710mW (Ta) | |||
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VIEW | Texas instruments | MOSFET P-CH 15V 1.27A 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-TSSOP | 0 | 2000 | P-Channel | - | 15V | 1.27A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 2.7V, 10V | +2V, -15V | 504mW (Ta) | |||
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2,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 8.6A PWRDI3333-8 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 0 | 2000 | P-Channel | - | 30V | 8.6A (Ta) | 17 mOhm @ 10A, 10V | 2.1V @ 250µA | 47nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | 900mW (Ta) | |||
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2,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 44000 | 2000 | P-Channel | - | 20V | 18A (Ta), 40A (Tc) | 6.7 mOhm @ 15A, 4.5V | 1V @ 250µA | 156nC @ 10V | 5940pF @ 10V | 1.8V, 4.5V | ±10V | 2.3W (Ta) | |||
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4,000
In-stock
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Diodes Incorporated | MOSFETP-CH 60VPOWERDI3333-8 | 8-PowerVDFN | Automotive, AEC-Q101 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PowerDI3333-8 | 6000 | 2000 | P-Channel | - | 60V | 6.1A (Ta), 18A (Tc) | 50 mOhm @ 7A, 10V | 3V @ 250µA | 24.1nC @ 10V | 1.293nF @ 30V | 4.5V, 10V | ±20V | 1.2W (Ta) | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 11.5A POWERDI333 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 0 | 2000 | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | 940mW (Ta) | |||
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14,000
In-stock
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Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 2000 | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 9.8A POWERDI3333 | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 0 | 2000 | P-Channel | - | 30V | 9.8A (Ta) | 11 mOhm @ 12A, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | 4.5V, 20V | ±25V | 940mW (Ta) | |||
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24,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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76,000
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||
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48,000
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | |||
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68,000
In-stock
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Infineon Technologies | MOSFET P-CH 55V 31A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) |
