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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 250V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 250V 2.2A (Ta) 230 mOhm @ 1.3A, 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 250V 60A TO-247AC TO-247-3 HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AC 0 4000 N-Channel - 250V 60A (Tc) 35.7 mOhm @ 42A, 10V 5V @ 250µA 240nC @ 10V 7290pF @ 25V 10V ±20V 430W (Tc)
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Infineon Technologies MOSFET N-CH 250V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 250V 2.2A (Ta) 230 mOhm @ 1.3A, 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 250V DIRECTFET L8 DirectFET™ Isometric L8 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete DIRECTFET L8 0 4000 N-Channel - 250V 375A (Tc) 38 mOhm @ 21A, 10V 5V @ 250µA 165nC @ 10V 6714pF @ 25V 10V ±30V 4.3W (Ta), 125W (Tc)
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