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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel   - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel   - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET 2N-CH 30V 3.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 2 N-Channel (Dual) 2W Logic Level Gate 30V 3.5A 100 mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V      
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Infineon Technologies MOSFET N/P-CH 30V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N and P-Channel 2W Logic Level Gate 30V 3.5A, 2.3A 100 mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V      
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