Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$2.610
RFQ
30
In-stock
Infineon Technologies MOSFET N-CH 150V 35A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 150V 35A (Tc) 39 mOhm @ 21A, 10V 5V @ 100µA 26nC @ 10V 1750pF @ 50V 10V ±20V 144W (Tc)
Default Photo
Per Unit
$1.800
RFQ
2,203
In-stock
STMicroelectronics MOSFET N-CH 100V 35A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 35A (Tc) 45 mOhm @ 15A, 10V 4V @ 250µA 55nC @ 10V 1180pF @ 25V 10V ±20V 115W (Tc)
Page 1 / 1