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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 83A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 250 N-Channel - 150V 83A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 25V 10V ±30V 330W (Tc)
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Infineon Technologies MOSFET N-CH 55V 75A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 3000 N-Channel - 55V 75A (Tc) 8 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V 330W (Tc)
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Infineon Technologies MOSFET N-CH 55V 75A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 150 N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V 330W (Tc)
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Infineon Technologies MOSFET N-CH 55V 75A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 55V 75A (Tc) 8 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 3650pF @ 25V 10V ±20V 330W (Tc)
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Infineon Technologies MOSFET N-CH 40V 75A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 150 N-Channel - 40V 75A (Tc) 2.3 mOhm @ 75A, 10V 4V @ 250µA 240nC @ 10V 6450pF @ 25V 10V ±20V 330W (Tc)
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