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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 61A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 350 N-Channel - 55V 61A (Tc) 11 mOhm @ 37A, 10V 4V @ 250µA 64nC @ 10V 1720pF @ 25V 10V ±20V 91W (Tc)
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Infineon Technologies MOSFET N-CH 30V 62A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 350 N-Channel - 30V 62A (Tc) 12 mOhm @ 15A, 10V 2V @ 250µA 24nC @ 4.5V 2417pF @ 15V 2.8V, 10V ±12V 87W (Tc)
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Infineon Technologies MOSFET N-CH 150V 12A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 350 N-Channel - 150V 12A (Tc) 166 mOhm @ 7.2A, 10V 2V @ 250µA 35nC @ 5V 775pF @ 25V 4V, 10V ±16V 80W (Tc)
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Infineon Technologies MOSFET N-CH 60V 48A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 350 N-Channel - 60V 48A (Tc) 23 mOhm @ 29A, 10V 4V @ 250µA 60nC @ 10V 1360pF @ 25V 10V ±20V 110W (Tc)
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