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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.110
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 78A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 78A (Tc) 4.8 mOhm @ 40A, 10V 2.35V @ 50µA 23nC @ 4.5V 2139pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Per Unit
$1.210
RFQ
5,383
In-stock
STMicroelectronics MOSFET N-CH 200V 9A TO-220 TO-220-3 MESH OVERLAY™ II Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 45nC @ 10V 700pF @ 25V 10V ±20V 75W (Tc)
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