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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.382
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RFQ
STMicroelectronics N-CHANNEL 800 V, 0.75 OHM TYP., TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ K5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 900V 7A (Tc) - 5V @ 100µA - - 10V ±30V 110W (Tc)
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Per Unit
$0.666
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RFQ
STMicroelectronics MOSFET N-CHANNEL 800V 3A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ K5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 800V 3A (Tc) 2.6 Ohm @ 1A, 10V 5V @ 100µA 3.7nC @ 10V 122pF @ 100V 10V ±30V 60W (Tc)
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Per Unit
$1.203
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RFQ
STMicroelectronics N-CHANNEL 900 V, 2.1 OHM TYP., 3 TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ K5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 900V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 100µA - - 10V ±30V 110W (Tc)
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Per Unit
$1.055
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1050V 1.5A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ K5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 1050V 1.5A (Tc) 8 Ohm @ 750mA, 10V 5V @ 100µA 10nC @ 10V 115pF @ 100V 10V ±30V 60W (Tc)
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