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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -50°C ~ 150°C (TJ) | DPAK | 0 | 3000 | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | 63W (Tc) | ||||
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5,000
In-stock
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onsemi | MOSFET N-CH 150V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 150V | 26A (Tc) | 40 mOhm @ 26A, 10V | 4V @ 250µA | 18.6nC @ 10V | 1285pF @ 75V | 10V | ±20V | 63W (Tc) |
