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Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
NTE4153NT1G
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RFQ
8,014
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onsemi MOSFET 20V 915mA N-Channel 6 V SMD/SMT SC-89-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 915 mA 500 mOhms     Enhancement  
SI1012X-T1-GE3
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RFQ
4,604
In-stock
Vishay Semiconductors MOSFET 20V 0.6A 175mW 700mohm @ 4.5V     SC-89-3     Reel   Si               TrenchFET
SI1032X-T1-GE3
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RFQ
3,828
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Vishay Semiconductors MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V     SC-89-3     Reel   Si               TrenchFET
NTE4151PT1G
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RFQ
422
In-stock
onsemi MOSFET -20V -760mA P-Channel 6 V SMD/SMT SC-89-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 760 mA 490 mOhms     Enhancement  
SI1011X-T1-GE3
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RFQ
100
In-stock
Vishay Semiconductors MOSFET -12V -.48A .19W     SC-89-3     Reel   Si               TrenchFET
NVE4153NT1G
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RFQ
2,995
In-stock
onsemi MOSFET NFET SC89 20V 915MA 230MO 6 V SMD/SMT SC-89-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 20 V 915 mA 127 mOhms 450 mV 1.82 nC Enhancement  
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