- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,028
In-stock
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STMicroelectronics | MOSFET N-channel 300 V, 60A II Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 60 A | 45 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 40 A | 45 mOhms | Enhancement | ||||||
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72
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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42
In-stock
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IXYS | MOSFET 70 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 45 mOhms | 3.5 V | 17 uC | Enhancement | CoolMOS | |||
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45
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 60A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 45 mOhms | 4.5 V | 255 nC | Enhancement | Linear L2 | |||
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792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | ||||
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58
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | ||||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 56 A | 45 mOhms | 4 V | 130 nC | Enhancement | ||||||
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19
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 56 A | 45 mOhms | 2 V | 195 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 45 mOhms | CoolMOS | ||||||||||
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VIEW | IXYS | MOSFET 62 Amps 150V 0.045 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 150 V | 36 A | 45 mOhms | |||||||||||
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VIEW | IXYS | MOSFET DIODE Id50 BVdass200 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 45 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 50 Amps 200V 0.045 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 45 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 73 Amps 300V 0.042 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 73 A | 45 mOhms | Enhancement | HyperFET | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 58 A | 45 mOhms | |||||||||||
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307
In-stock
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onsemi | MOSFET PCH 4.5V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 40 V | - 19 A | 45 mOhms |