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Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX120N30P3
1+
$11.720
10+
$10.780
25+
$10.330
100+
$9.100
RFQ
24
In-stock
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 120 A 27 mOhms 3 V 150 nC Enhancement HyperFET
IXTR90P10P
1+
$10.420
10+
$9.420
25+
$8.980
100+
$7.800
VIEW
RFQ
IXYS MOSFET -57.0 Amps -100V 0.270 Rds   Through Hole TO-247-3     Tube   Si P-Channel - 100 V - 57 A 27 mOhms        
IXFH100N25P
30+
$7.860
120+
$6.820
270+
$6.520
510+
$5.940
VIEW
RFQ
IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms 5 V 185 nC Enhancement PolarHT, HiPerFET
IXFR100N25
30+
$16.470
120+
$14.510
270+
$13.800
510+
$12.910
VIEW
RFQ
IXYS MOSFET 87 Amps 250V 0.027 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 87 A 27 mOhms     Enhancement HyperFET
IXFX100N25
30+
$14.660
120+
$12.910
270+
$12.280
510+
$11.490
VIEW
RFQ
IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms     Enhancement HyperFET
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