- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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120
In-stock
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IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | Enhancement | HyperFET | |||||
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174
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.7 mOhms | 2 V | 210 nC | Enhancement | ||||
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90
In-stock
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IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT, HiPerFET | |||
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25
In-stock
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IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET 133 Amps 100V 0.008 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 8 mOhms | 5 V | 235 nC | Enhancement | Polar |
