- Rds On - Drain-Source Resistance :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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54
In-stock
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IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | |||||
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31
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IXYS | MOSFET 22.0 Amps 600 V 0.33 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | Enhancement | |||||
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66
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | ||
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18
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IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | |||||
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43
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | |||||
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38
In-stock
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | |||
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VIEW | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 420 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 23 Amps 600V 0.320 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 320 mOhms | Enhancement |
