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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTQ22N50P
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RFQ
17,900
In-stock
IXYS MOSFET 22.0 Amps 500 V 0.27 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 22 A 270 mOhms     Enhancement  
IXTQ22N60P
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RFQ
31
In-stock
IXYS MOSFET 22.0 Amps 600 V 0.33 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 22 A 350 mOhms     Enhancement  
IXFQ22N60P3
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RFQ
38
In-stock
IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 30 V Through Hole TO-3P-3     Tube 1 Channel Si N-Channel 600 V 22 A 360 mOhms 5 V 38 nC   HyperFET
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