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Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
200N25N
1+
$6.600
10+
$5.600
100+
$4.850
2500+
$4.500
RFQ
8,652
In-stock
Infineon Technologies MOSFET N-CH 250V 64A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 250V 64A (Tc) 20 mOhm @ 64A, 10V 4V @ 270µA 86nC @ 10V 7100pF @ 100V 10V ±20V 300W (Tc)
Default Photo
Per Unit
$7.510
RFQ
340
In-stock
Infineon Technologies MOSFET N-CH 250V 61A TO220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 250V 61A (Tc) 22 mOhm @ 61A, 10V 4V @ 270µA 86nC @ 10V 7076pF @ 125V 10V ±20V 300W (Tc)
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