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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 500 | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 2000 | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO-220 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | PG-TO-220-3 | 0 | 500 | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO-220AB | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 2000 | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) |
