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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 90A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 60V 90A (Tc) 4 mOhm @ 90A, 10V 4V @ 90µA 128nC @ 10V 10400pF @ 25V 10V ±20V 150W (Tc)
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Infineon Technologies MOSFET N-CH 40V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 40V 80A (Tc) 4.1 mOhm @ 80A, 10V 4V @ 90µA 80nC @ 10V 5200pF @ 25V 10V ±20V 136W (Tc)
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$1.515
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Infineon Technologies MOSFET N-CH TO220-3 TO-220-3 Automotive, AEC-Q101, OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 500 N-Channel - 80V 80A (Tc) 5.8 mOhm @ 80A, 10V 4V @ 90µA 70nC @ 10V 4800pF @ 25V 10V ±20V 150W (Tc)
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