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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 100V 20A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 100V 20A (Tc) 50 mOhm @ 20A, 10V 4V @ 20µA 16nC @ 10V 1090pF @ 50V 10V ±20V 44W (Tc)
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RFQ
6,000
In-stock
STMicroelectronics MOSFET N-CH 1000V 1.85A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 1000V 1.85A (Tc) 8.5 Ohm @ 900mA, 10V 4.5V @ 50µA 16nC @ 10V 499pF @ 25V 10V ±30V 70W (Tc)
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