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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) PG-TO220-3-1 0 0 N-Channel - 55V 80A (Tc) 5 mOhm @ 80A, 10V 2V @ 250µA 190nC @ 10V 5000pF @ 25V 4.5V, 10V ±20V 300W (Tc)
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) PG-TO220-3-1 0 0 N-Channel - 55V 80A (Tc) 5.5 mOhm @ 80A, 10V 4V @ 230µA 155nC @ 10V 4400pF @ 25V 10V ±20V 300W (Tc)
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Infineon Technologies MOSFET N-CH 55V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) PG-TO220-3-1 0 0 N-Channel - 55V 100A (Tc) 4.7 mOhm @ 80A, 10V 2V @ 250µA 230nC @ 10V 5660pF @ 25V 4.5V, 10V ±20V 300W (Tc)
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Infineon Technologies MOSFET N-CH 55V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) PG-TO220-3-1 0 500 N-Channel - 55V 100A (Tc) 5 mOhm @ 80A, 10V 4V @ 250µA 170nC @ 10V 5110pF @ 25V 10V ±20V 300W (Tc)
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Infineon Technologies MOSFET N-CH 40V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) PG-TO220-3-1 0 0 N-Channel - 40V 100A (Tc) 3.6 mOhm @ 80A, 10V 4V @ 250µA 172nC @ 10V 5300pF @ 25V 10V ±20V 300W (Tc)
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