- Manufacture :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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649
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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349
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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356
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | ||||
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243
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | OptiMOS | |||
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472
In-stock
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STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.8 mOhms | 4.5 V | 340 nC |
