- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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760
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 57 nC | |||||||
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556
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 100 nC | Enhancement | ||||
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94
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 4.1 160A STripFET DeepGATE | 4 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 5.5 mOhms | 4 V | 192 nC | |||||||
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34
In-stock
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IXYS | MOSFET 120 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 120 A | 7.7 mOhms | 4 V | 78 nC | Enhancement | TrenchT2 | ||||
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VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | 4 V | 58 nC | Enhancement | TrenchT2 | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.4 mOhms | 4 V | 183 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC |
