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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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76
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.9 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | ||
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33,000
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 125 W | 1.9 mOhms | 1.7 V | 40 nC | Enhancement | ||||
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104
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1 mA | 1.9 mOhms |
