- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,880
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 20 A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | ||||
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45
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 180 mOhms | 3 V | 43 nC | Enhancement | |||
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996
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS, 21A TO220F | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 165 Ohms | 3 V | 45 nC |
