3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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182
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | |||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 210 mOhms | 3 V | 35 nC | Enhancement |
