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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	STF10N60M2	1+ $1.610 10+ $1.380 100+ $1.060 500+ $0.932		PDF RFQ	75,100 In-stock	STMicroelectronics	MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2	25 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	7.5 A	560 mOhms	3 V	13.5 nC
	STP10N60M2	1+ $1.600 10+ $1.360 100+ $1.050 500+ $0.922		PDF RFQ	802 In-stock	STMicroelectronics	MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2	25 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	7.5 A	560 mOhms	3 V	13.5 nC
	DMG4N65CT	1+ $1.050 10+ $0.896 100+ $0.689 500+ $0.609		PDF RFQ	185 In-stock	Diodes Incorporated	MOSFET N-CH MOSFET 650V 4A	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	4 A	2.1 Ohms	3 V	13.5 nC	Enhancement
	DMG4N65CTI	1+ $0.840 10+ $0.695 100+ $0.448 1000+ $0.359		PDF RFQ	365 In-stock	Diodes Incorporated	MOSFET N-CH MOSFET 650V 4A	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	4 A	2.1 Ohms	3 V	13.5 nC	Enhancement

STF10N60M2

STF10N60M2

STMicroelectronics

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

Stock : 75,100

1+: $1.610

10+: $1.380

100+: $1.060

500+: $0.932

STP10N60M2

STP10N60M2

STMicroelectronics

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

Stock : 802

1+: $1.600

10+: $1.360

100+: $1.050

500+: $0.922

DMG4N65CT

DMG4N65CT

Diodes Incorporated

MOSFET N-CH MOSFET 650V 4A

Stock : 185

1+: $1.050

10+: $0.896

100+: $0.689

500+: $0.609

DMG4N65CTI

DMG4N65CTI

Diodes Incorporated

MOSFET N-CH MOSFET 650V 4A

Stock : 365

1+: $0.840

10+: $0.695

100+: $0.448

1000+: $0.359

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