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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge
IRF3315PBF
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17,930
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Infineon Technologies MOSFET MOSFT 150V 21A 70mOhm 63.3nC 20 V Through Hole TO-220-3 Tube 1 Channel Si N-Channel 150 V 21 A 70 mOhms 63.3 nC
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