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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,321
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 24 A | 175 mOhms | Enhancement | UniFET | ||||
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1,248
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 15 A | 300 mOhms | Enhancement | UniFET | ||||
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1,456
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | |||||
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1,127
In-stock
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Fairchild Semiconductor | MOSFET UniFETII 500V 22A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 220 mOhms | Enhancement | UniFET | ||||
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2,770
In-stock
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Fairchild Semiconductor | MOSFET N-Chan UniFET2 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.38 Ohms | 5 V | 9 nC | UniFET | |||
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1,606
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | Enhancement | UniFET | ||||
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1,318
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 10 mOhms | Enhancement | UniFET | ||||
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988
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CHANNEL | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 760 mOhms | Enhancement | UniFET | ||||
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1,360
In-stock
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Fairchild Semiconductor | MOSFET 600N-Channel MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | |||
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738
In-stock
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Fairchild Semiconductor | MOSFET UniFET, 400V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 19 A | 240 mOhms | Enhancement | UniFET | ||||
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815
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 26 A | 160 mOhms | Enhancement | UniFET | ||||
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13,782
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | Enhancement | UniFET | ||||
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1,033
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 18 nC | Enhancement | UniFET | |||
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646
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.9 A | 550 mOhms | Enhancement | UniFET | ||||
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583
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.05 Ohms | 5 V | 13 nC | UniFET | |||||
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11,700
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 5 V | 23 nC | UniFET | |||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 5 V | 10 nC | UniFET |
