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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRF1018ESTRLPBF
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RFQ
1,428
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Infineon Technologies MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg 20 V SMD/SMT TO-263-3     Reel 1 Channel Si N-Channel 60 V 79 A 7.1 mOhms   46 nC    
IRF1018ESPBF
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RFQ
933
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Infineon Technologies MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC 20 V SMD/SMT TO-263-3     Tube 1 Channel Si N-Channel 60 V 79 A 7.1 mOhms   46 nC    
FDB2532
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RFQ
882
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Fairchild Semiconductor MOSFET 150V N-Channel QFET Trench 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 150 V 79 A 14 mOhms     Enhancement PowerTrench
FDB2532_F085
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RFQ
Fairchild Semiconductor MOSFET 150V N-Channel PowerTrench MOSFET 20 V SMD/SMT TO-263-3     Reel 1 Channel Si N-Channel 150 V 79 A 14 mOhms 4 V 82 nC   PowerTrench
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