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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge
STB26NM60ND
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985
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STMicroelectronics MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II 25 V SMD/SMT TO-263-3 Reel 1 Channel Si N-Channel 600 V 21 A 145 mOhms 4 V 54.6 nC
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