- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 65 mOhms (3)
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- 8.3 mOhms (1)
- 8.6 mOhms (1)
- 8.8 mOhms (1)
- 8.9 mOhms (1)
- 9 mOhms (9)
- 9.5 mOhms (2)
- 9.8 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (8)
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- 33.3 nC (3)
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- 36 nC (1)
- 38 nC (2)
- 39 nC (3)
- 40 nC (2)
- 41.8 nC (1)
- 46.9 nC (1)
- 48 nC (2)
- 5.4 nC (1)
- 50 nC (1)
- 50.7 nC (1)
- 55 nC (2)
- 62 nC (1)
- 7 nC (2)
- 75 nC (5)
- 8 nC (1)
- 8.5 nC (2)
- 8.7 nC (1)
- 80 nC (1)
- 9 nC (1)
- 9.6 nC (1)
- 93.3 nC (2)
- Applied Filters :
159 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
10,000
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 55 A | 11.5 mOhms | Enhancement | PowerTrench | |||||
|
|
10,071
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 94 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
|
|
3,833
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
|
|
3,157
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 66 A | 8 mOhms | Enhancement | PowerTrench | |||||
|
|
4,966
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 116 A | 5.1 mOhms | Enhancement | PowerTrench | |||||
|
|
2,920
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 84 A | 4 mOhms | Enhancement | PowerTrench | |||||
|
|
454,600
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
|
|
1,535
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 200A 3mOhm 75nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | ||||||||
|
|
2,663
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | |||
|
|
2,296
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | Enhancement | ||||||
|
|
8,413
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.5 mOhms | 15 nC | OptiMOS | |||||
|
|
10,835
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 9 mOhms | Enhancement | OptiMOS | |||||
|
|
3,506
In-stock
|
onsemi | MOSFET 30V 68A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 68 A | 7.8 mOhms | Enhancement | ||||||
|
|
3,077
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.3 mOhms | 2.3 V | 50 nC | |||||||
|
|
1,797
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
|
|
2,584
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | |||||
|
|
3,293
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | ||||
|
|
5,449
In-stock
|
onsemi | MOSFET NFET 30V 88A 5MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 88 A | 5 mOhms | Enhancement | ||||||
|
|
4,470
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 28 mOhms | Enhancement | PowerTrench | |||||
|
|
4,753
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | |||||
|
|
3,854
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
2,808
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 73 A | 11 mOhms | Enhancement | PowerTrench | |||||
|
|
2,686
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 5.2 mOhms | PowerTrench | ||||||
|
|
3,239
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 15 mOhms | Enhancement | PowerTrench | |||||
|
|
2,323
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Fast Switching | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 8.8 mOhms | Enhancement | PowerTrench | |||||
|
|
1,364
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 12 mOhms | Enhancement | PowerTrench | |||||
|
|
2,368
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
|
|
2,160
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
|
|
1,962
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 1.35 V to 2.35 V | 9.6 nC | Enhancement | ||||
|
|
5,011
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 17 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 38 mOhms | Enhancement |
