- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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671
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 60 A | 11.2 mOhms | |||||||||
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836
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 60 A | 6.3 mOhms | |||||||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 60 A | 10 mOhms | - 2.6 V | 47 nC | Enhancement |
