- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,359
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
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346
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
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GET PRICE |
429,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel 600V 4A | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4 A | 1.65 Ohms | ||||||||
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3,038
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.5 Ohms | 12 nC | Enhancement | ||||||
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2,011
In-stock
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STMicroelectronics | MOSFET 950 VDSS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 950 V | 4 A | 3 Ohms | 19 nC | |||||||||
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2,523
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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5,070
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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23,460
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V 4A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | Enhancement | |||||||
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1,209
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 1300 mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | |||||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | ||||||
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220
In-stock
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Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 4 A | 1.15 Ohms | 2.5 V | 4.7 nC | Enhancement | CoolMOS | ||||
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40
In-stock
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IXYS | MOSFET PolarHV Power MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 4 A | 2 Ohms | 5.5 V | 13 nC | Enhancement | PolarHV | |||||
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140
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-252-3 | Tube | Si | N-Channel | 600 V | 4 A | 2.2 Ohms | HyperFET | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 4A 550V 80W 490pF 1.88 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 4 A | 1.88 Ohms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 4A 500V 80W 380pF 2 Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 2 Ohms | |||||||||||
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9,340
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Ch MOSFET QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | |||||||
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57
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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70
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement |