- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,810
In-stock
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IR / Infineon | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | |||||||
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1,894
In-stock
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onsemi | MOSFET 24V 110A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 110 A | 4.1 mOhms | Enhancement | |||||
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GET PRICE |
799
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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2,362
In-stock
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onsemi | MOSFET NFET 24V SPCL TR | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 24 V | 110 A | 4.6 mOhms | |||||||||
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GET PRICE |
1,060
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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322
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | Enhancement | ||||
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GET PRICE |
5,487
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | |||
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GET PRICE |
8,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | |||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 2 V to 4 V | 97.3 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 110A 6.5mOhm 29nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC | ||||||||
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GET PRICE |
88
In-stock
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IR / Infineon | MOSFET MOSFT 40V 110A 6.5mOhm 66.7nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 66.7 nC | |||||||
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GET PRICE |
38
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 1 V | 66.7 nC | Enhancement |
