- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,147
In-stock
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IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC | |||||||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||
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6,730
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | |||||||
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688
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC |
