- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,573
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | ||||||
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3,714
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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2,495
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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383
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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2,075
In-stock
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onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | ||||
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1,539
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | |||||
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117
In-stock
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STMicroelectronics | MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power ... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 10 A | 180 mOhms | 2 V | 16.5 nC | Enhancement | |||||
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219
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 3 V to 5.5 V | 19 nC | Enhancement | ||||
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328
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 150V 14A 180mOhm 19nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 19 nC |