8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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8,413
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.5 mOhms | 15 nC | OptiMOS | ||||
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1,011
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | Enhancement | ||||
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498
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | |||||||
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2,606
In-stock
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onsemi | MOSFET NFET 25V 65A 0.0075R DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 13 A | 7.5 mOhms | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | |||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 55V 91A 7.5mOhm 63nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 91 A | 7.5 mOhms | 63 nC |
