- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
14,150
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 73A 14mOhm 90nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 90 nC | ||||||
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GET PRICE |
800
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 4 V | 90 nC | |||
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VIEW | Renesas Electronics | MOSFET MP-3ZP PoTr-MOSFET Low | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3 V | 90 nC | |||||
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VIEW | Renesas Electronics | MOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4 | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | Si | N-Channel | 60 V | 90 A | 1.4 V to 2.5 V | 90 nC | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 90 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 4 V | 90 nC |
