- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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892
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel 40 V, 0.013 Ohm typ., 46 A STripF... | +/- 18 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 17 mOhms | - 2.5 V | 65.5 nC | Enhancement | STripFET | ||||
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29
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -40 A STripF... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 49 A | 15 mOhms | - 4 V | 30.6 nC | Enhancement | STripFET | ||||
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27,063
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 3 V | 28 nC | Enhancement | STripFET | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 2.8 mOhm typ., 80 A STripFET H7 Power M... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | 1.2 V | 13.7 nC | Enhancement | STripFET |