- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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736
In-stock
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STMicroelectronics | MOSFET N-Ch, 650V-1ohm Zener SuperMESH 6.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.4 A | 1.2 Ohms | 3.75 V | 41 nC | Enhancement | |||||
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793
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | QFET | ||||||
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38,800
In-stock
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Fairchild Semiconductor | MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 440 mOhms | Enhancement | |||||||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||||
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110
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | |||||
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175
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.8 A | 530 mOhms | 2.5 V | 16 nC | Enhancement | |||||
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250
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1 Ohms | 2.5 V | 10.5 nC | Enhancement | |||||
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113
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.33ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 330 mOhms | 2.5 V to 3.5 V | 25 nC | Enhancement | ||||||
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899
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | |||||||
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VIEW | Toshiba | MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V to 4.5 V | 40 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 068ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 68 mOhms | 2.5 V to 3.5 V | 100 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V | 115 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 850 mOhms | 2.5 V | 11 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.8 A | 640 mOhms | 2.5 V | 15 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement |