- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,960
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | ||||
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1,149
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 87 mOhms | 2 V | 56.5 nC | Enhancement | |||||
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937
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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880
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 185 mOhms | 2 V | 29 nC | Enhancement | ||||
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965
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 275 mOhms | 2 V | 20 nC | Enhancement | ||||
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283
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 2 V | 19.5 nC | Enhancement | ||||
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579
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | ||||||
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390
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | |||||
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253
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 20 A | 165 mOhms | 2 V | - | Enhancement | |||||
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435
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 420 mOhms | 2 V | 16.5 nC | Enhancement | ||||
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393
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 10 A | 430 mOhms | 3 V | 17 nC | Enhancement | |||||
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185
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | Enhancement |